PART |
Description |
Maker |
HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
UPD43257BGU-70L-A UPD43257BGU-70LL-A UPD43257BGU-8 |
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
HYB514171BJ-50- Q67100-Q727 Q67100-Q2021 HYB514171 |
256k x 16-Bit Dynamic RAM 256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存)
|
SIEMENS AG
|
UPD444016LG5-A10-7JF UPD444016LG5-A12-7JF UPD44401 |
256K X 16 STANDARD SRAM, 8 ns, PDSO44 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT 4分位CMOS快速静态存储器256K字由16
|
NEC, Corp. NEC Corp. NEC[NEC]
|
CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. |
128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
|
ON Semiconductor Unisonic Technologies Co., Ltd. TDK, Corp. Atmel, Corp. Advanced Analog Technology, Inc. Silicon Storage Technology, Inc. Air Cost Control
|
MCM6229A-45 MCM6229AWJ20R2 |
256K X 4 BIT STATIC RANDOM ACCESS MEMORY 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
MX23C4096 23C4096 MX23C4096QC-20 MX23C4096PC-10 MX |
4M-BIT [256K x 16] CMOS MASK ROM 4分位[256K × 16]的CMOS掩膜ROM From old datasheet system
|
Electronic Theatre Controls, Inc. http:// List of Unclassifed Manufacturers Macronix 旺宏 ETC[ETC] Macronix International
|
KM641003C |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
LP62S2048A-I LP62S2048AM-55LLI LP62S2048AM-70LLI L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM ER 22C 18#16 4#12 SKT PLUG
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
PDM41257SA7SOTY PDM41257SA7SOTR PDM41257LA7SOTY PD |
256K static RAM 256K x 1-bit x1 SRAM
|
PARADIGM
|
MX29LV400CBXHI-70Q MX29LV400CTXHI-70Q 29LV400C-90 |
4分位[12k × 8 / 256K × 16] CMOS单电V时仅闪存 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO44 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 55 ns, PDSO48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 55 ns, PBGA48 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|